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FC200JY

FC200JY

FC200JY

FC200JY

Chip Structure

Base Layer : P-TEOS*
Metal Layer : TiN / AI-0.5%Cu
Passivation Layer : HDP* / P-SiN (option) NSG* / Polyimide

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma
*NSG : Non-doped Silicate Glass

Specifications	Si		Glass
TYPE	A	B	B**
Wafer Size	8 inch	8 inch	8 inch
Wafer Thickness	725±25μm	725±25μm	700±70μm
Chip Size	10.0mm ♦	10.0mm ♦	10.0mm ♦
Bump pitch	200μm	200μm	200μm
Function	Daisy Chain	Daisy Chain	x
Pad config	Area	Area	Area
Electrode	Ball Mounted Solder Bump	Cu Pillar	Cu Pillar
Pad Size	100μm ♦	100μm ♦	x
Passivation opening	φ60μm •	φ60μm •	x
Polyimide opening	φ80μm •	φ80μm •	x
UBM Size	φ100μm •	φ90μm •	φ90μm •
Bump Size	φ100μm •	φ90μm •	φ90μm •
Scribe width	100μm	100μm	x
Number of Pad	2116 pads/chip (46×46)	2116 pads/chip (46×46)	x
Number of Chip	228 chips/wafer	228 chips/wafer	228 chips/wafer
			• Top Side ♦ Bottom Side

**Glass die do not have daisy-chain function and no alignment marks or patterns on die