Chip Structure
- Base Layer : P-SiO
- Metal Layer : TiN / AI-Si
- Passivation Layer : P-SiO / P-SiN (option) Polymide
| Specifications | |
| Wafer size | φ300mm |
| Wafer Thickness | 775±25um |
| Chip size | 25mm * 25 mm (Scribe center to center) |
| Pad (bump)pitch | 150μm |
| Function | Daisy Chain |
| Electrode | Cu pillar (Cu30μm+SnAg15μm) |
| Bump size | φ75μm |
| Passivation opening | 40μm (octagon) |
| Polyimide opening | φ40μm |
| Scribe line width | 100μm |
| Number of pad | 25,921 pads (161×161 Matrix) |
