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Walts TEG Wafers and Test Elements


Practical Components is the exclusive distributor of Walts Co., LTD In the U.S.A. Walts provides next-generation assembly technology for semiconductors with leading-edge technologies. As the de facto standard, Walts products are used in research and development sites worldwide.

Their well experienced designers can also custom-make TEG (Test Element Groups) to better suit your needs. A wide variety of film sputtering and deposition, back grinding, dicing, bump forming, assembling and analysis are available.

Material Au Solder Cu Ni Electroless
Ni/Au
Function
- +SnAg +Ni
+SnAg
+Ni
+Au
- +SnAg
Form PLATE STUD PLATE MOUNT PLATE PLATE PLATE PLATE PLATE PLATE PLATE ---
Image ---
MB50 - - Daisy
MB60 - - Daisy
MB80 - - Daisy
MB130 - Daisy
 CC40   - - - Daisy
IP40 - - - - Daisy/Vernier
Bump Short/
Breakdown Voltage
 IP40A - - - - - - - -
CC80 - - Daisy
IP80 - - - - Daisy
CC80TSV - - - - - - - - / TSV
CC80Mark II - - Daisy/Migration
CC80Mark II WM - - - - - - - - Daisy/Migration
WM40-0101 - - - - - - - - - ---
CC80Mark III - - - - - - - - Daisy/Migration
WM40-0102 - - - - - - - - - - Daisy
CC80Mark IV - - - - - - - - - Daisy
IP80Mark IV - - - - - - - - - - Daisy
FC150LC - - - - - - - - - Daisy
FC150(Si) - - Daisy
FC150(Glass) - - ---
FC150SC - - Daisy
FC200(Si)
- - Daisy
FC200(Glass) - - ---
FC200SC - - Daisy
FC500G - - - - - - - - - ---
FBW - - - - - - - - ---
WLP - - - - - - - - - - Daisy
MC03 - - - - - - - - Daisy
ME - - - - - - - - - - - Migration
STAC - - Stress/
Thermal/
HeatGeneration
STAC150FA - - - - -
STAC300FA - - - - -
HPW - - Thermal/
Heat Generation
HPW150FA - - - - -
HPW300FA - - - - -
HPWTSV - - - - - - - - - TSV
LCD30 - - Daisy/
Breakdown Voltage
PWB - - - - - - - - - - - Bondability
Top Side / Bottom Side

Cu Pillar Bump TEG

Solder Bump TEG

Electroless Plating Bump TEG


WALTS-TEG MB50-0101JY

MB50-0101JY
Specification Type-A Type-B Type-C (Glass)
Wafer Size Φ 8 inch Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm 700±70µm
Chip Size 7.3mm■ 7.3mm■ 7.3mm■
Pad Pitch 50µm 50µm 50µm
Function Daisy Chian Daisy Chian -
Bump Size - Au: 30µm■
Cu: 30µm■
Cu: Φ25µm
Cu: 30µm■
Cu: Φ25µm
Bump Height - (Cu30µm+SnAg15µm) (Cu30µm+SnAg15µm)
Number of Pad 544 pads/chip 544 pads/chip -
Number of Chip 478 chips/wafer 478 chips/wafer 478 chips/wafer
Polyimide (Option)
 Evaluation KIT WALTS-KIT MB50-0102JY_NCR [Standard]
WALTS-KIT MB50-0104JY_CR [Standard]
WALTS-KIT MB50-0105JY_CR [Standard]
WALTS-KIT MB50-0102JY_NCR [MAP]
WALTS-KIT MB50-0103JY_CR [MAP]
WALTS-KIT MB50-0104JY_CR [MAP]
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WALTS-TEG MB60-0101JY

Specification MB60-0101JY
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 7.3mm■
Pad Pitch 60µm
Function Daisy Chian
Bump Size -
Bump Height -
Number of Pad 448 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option)
Evaluation KIT ---
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WALTS-TEG MB80-STG0101JY

Specification TYPE-A  TYPE-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 7.3mm■ 7.3mm■
Pad Pitch 80µm Staggerd 80µm Staggerd
Function Daisy Chian Daisy Chian
Bump Size - 38µm■
Bump Height (Wire Bonding) (Cu30µm+SnAg15µm)
Number of Pad 648 pads/chip
82 pads x 4 (Outer Line)
80 pads x 4 (Innter Line)
648 pads/chip
82 pads x 4 (Outer Line)
80 pads x 4 (Innter Line)
Number of Chip 478 chips/wafer 478 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT CC80-0104JY (Model IV)
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WALTS-TEG AS8R

TEG_AS8R
Specification AS8R
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 3.5 mm■
Pad Pitch 120µm
Function Daisy Chian
Bump Size -
Bump Height -
Number of Pad 96 pads/chip (Outer Line)
88 pads/chip (Inner Line)
Number of Chip 2266 chips/wafer
Polyimide (Option)
Evaluation KIT ---
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WALTS-TEG MB130-STG0101JY

WALTS-TEG MB130A-STG0101JY

TEG_MB130-STG0101JY
Specification MB130 MB130A
TYPE-A TYPE-B 
Wafer Size Φ 6 inch Φ 6 inch Φ 8 inch
Wafer Thickness 550±25µm 550±25µm 725±25µm
Chip Size 2.13 mm■ 2.13 mm■ 2.13 mm■
Pad Pitch 130µm 130µm 130µm
Function Daisy Chian Daisy Chian Daisy Chian
Bump Size - 70µm■ -
Bump Height (Wire Bonding)
(Au Stud Bump)
(Cu30µm+SnAg15µm) (Wire Bonding)
(Au Stud Bump)
Number of Pad 108 pad/chip
15 pads x 4 (outer Line)
12 pads x 4 (Inner Line)
108 pad/chip
15 pads x 4 (outer Line)
12 pads x 4 (Inner Line)
108 pad/chip
15 pads x 4 (outer Line)
12 pads x 4 (Inner Line)
Number of Chip 3300 chips/wafer 3300 chips/wafer 6060 chips/wafer
Polyimide (Option)
Evaluation KIT ---
--- 
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WALTS-TEG MB6020-0102JY

TEG_MB6020-0101JY
Specification MB6020-0102JY
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 3.0 mm■
Pad Pitch 60 / 55 / 50 / 45 / 40 / 35 / 30 / 25 / 20 µm
Function Daisy Chian
Bump Size -
Bump Height -
Number of Pad (40x4) (40x4) (38x4)
(38x4) (36x4) (34x4)
(30x4) (26x4) (18x4)
Number of Chip 3016 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---
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WALTS-TEG CC40-0101JY

TEG_CC40-0101JY
Specification CC40-0101JY
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 7.3 mm■
Pad Pitch Model I: 40µm Staggered + 40µm Full Area
Model II: 40µm Staggered
Function Daisy Chian
Bump Size Model I: 22µm
Model II: 22µm
Bump Height (Cu15µm+SnAg10µm)
Number of Pad Model I: 29576 pads/chip
Model II: 1352 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option) ---
Evaluation KIT WALTS-TEG IP40-0101JY (Silicon Interposer)
WALTS-TEG IP40A-0101JY (Silicon Interposer)
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WALTS-TEG IP40-0101JY

TEG_IP40-0101JY
Specification IP40-0101JY(ModelI / ModelII)
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 40µm pitch Full area + Staggered (Model I)
40µm pitch Staggered (Model II)
(2) 250µm pitch Periphera (Outer Pad)
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size ---
Bump Height ---
Number of Pad Model I: (1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Model II: (1) 1352 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip 228 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---
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WALTS-TEG IP40A-0101JY

TEG_IP40A-0101JY
Specification IP40A-0101JY(ModelI)
Wafer Size Φ 12 inch
Wafer Thickness 775±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 40µm pitch Full area + Staggered (Model I)
(2) 250µm pitch Periphera (Outer Pad)
Function Daisy Chian
Bump Short Check
Vernier
Breakdown Voltage Check between the Bumps
Bump Size ---
Bump Height ---
Number of Pad Model I: (1) 29576 pads/chip (2) 124 pads/chip (Outer Pad)
Number of Chip 616 chips/wafer
Polyimide (Option) ---
Evaluation KIT ---
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WALTS-TEG CC80-0101JY

Specification CC80-0101JY
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 7.3 mm■
Pad Pitch 80µm Staggered (Periphera)
300µm Full Area (Center Core)
Function Daisy Chian
Bump Size Model I: 38µm■ or Φ42µm
Model II: 38µm■
Model III: 38µm■
Model IV: 38µm■
Bump Height (Cu30µm+SnAg15µm)
Number of Pad Model I: 1048 pads/chip
Model II: 904 pads/chip
Model III: 728 pads/chip
Model IV: 648 pads/chip
Number of Chip 478 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-TEG IP80-STG0101JY (Silicon Interposer)
WALTS-KIT CC80-0104JY
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WALTS-TEG IP80-0101JY

Specification IP80-0101JY
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 10.0 mm■
Pad Pitch (1) 80µm Staggered (Inner Pad)
(2) 300µm Full Area (Center Core)
(3) 250µm Periphera (Outer Pad)
Function Daisy Chian
Bump Size -
Bump Height -
Number of Pad (1) 648 pads/chip
(2) 400 pads/chip
(3) 124 pads/chip
Number of Chip 228 chips/wafer
Polyimide (Option)
Evaluation KIT ---
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WALTS-TEG CC80TSV-0101JY

TEG_CC80TSV
Specification CC80TSV-1 CC80TSV-2
Wafer Size Φ 8 inch Φ 8 inch
Chip Thickness 100µm 100µm
Chip Size 7.3 mm■ 7.3 mm■
Pad Pitch 80µm Staggered (Periphera)
300µm Full Area (Center Core)
80µm Staggered (Periphera)
300µm Full Area (Center Core)
TSV Hole Diameter Φ40µm Φ40µm
Top
Side
Electrode Electroless Ni/Au Cu+SnAg
 Bump Size Φ48µm(Option: Φ42µm) 38µm■ (Option: Φ42µm)
 Bump Height (8~12µm) (Cu20µm+SnAg15µm)
Bottom
Side
Electrode Electroless Ni/Au Electroless Ni/Au
 Bump Size Φ48µm(Option: Φ42µm) Φ48µm(Option: Φ42µm)
 Bump Height (8~12µm) (8~12µm)
Number of Chip 478 chips/wafer 478 chips/wafer
Evaluation KIT WALTS-TEG CC80-0101JY
WALTS-TEG IP80-0101JY (Silicon Interposer)
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WALTS-TEG CC80MarKII-0101JY

TEG_CC80MarkII
Specification CC80MarkII-0101JY [STD]
Wafer Size Φ 8 inch
Wafer Thickness 725±25µm
Chip Size 12.0 mm■
Pad Pitch 80µm Staggered (Periphera)
200µm Full Area (Center Core)
Function Daisy Chain & Migration
Bump Size Φ31µm
Bump Height (Cu30µm+SnAg15µm)
Number of Pad 1660 pads/chip (Periphera)
2916 pads/chip (Center Core)
Number of Chip 177 chips/wafer
Polyimide (Option) ---
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
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WALTS-TEG CC80MarkII WM-0101JY

TEG_CC80TSV
Specification CC80MarkII WM-0101JY
※Base Wafer: WALTS TEG CC80MarkII-0101JY
 Wafer Size 8inch 
Wafer Thickness 100µm
Chip Size 10 mm x 8 mm
Function Daisy Chain & Migration(Top Side)
Top
Side
Electrode Cu Pillar
 Bump Size Φ31µm
 Bump Height (Cu 20µm + SnAg 15µm)
Bottom
Side
Electrode Cu Post
 Bump Size Φ26µm
Bump Pitch ① 40µm ②300µm 
 Number of Bump ①1200 bumps ② 714 bumps 
 Bump Height (Cu 6µm)
Number of Chip 177 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
WALTS-TEG WM40-0101JY
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WALTS-TEG WM40-0101JY

TEG_CC80TSV
Specification WM40-0101JY
Wafer Size 8inch 
Wafer Thickness 50µm
Chip Size 10 mm x 8 mm
Function ---
Top
Side
Electrode Cu Pillar
Bump Size Φ20µm
Bump Height (Cu15µm + SnAg8µm)
Bump Pitch ① 40µm ②300µm
Number of Bump ①1200 bumps ② 714 bumps
Bottom
Side
Electrode Cu Post
Bump Size Φ26µm
Bump Height (Cu 6µm)
Bump Pitch ① 40µm ②300µm
Number of Bump ①1200 bumps ② 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
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WALTS-TEG CC80MarkIII-0101JY

TEG_CC80TSV
Specification CC80MarkIII-0101JY
Wafer Size 6inch 
Wafer Thickness 100µm or 350µm
Chip Size 12.0 mm x 12.0 mm
Function Daisy Chain & Migration(Top Side)
Daisy Chain (Bottom Side)
Top
Side
Electrode Cu Pillar
Bump Size Φ31µm
Pad Pitch ① 80µm Three Rows Staggered (Peripheral)
② 200µm Full Area(Center Core)
Number of Bump/Pad ① 1660bumps/1660pads (Peripheral)
② 2916bumps/2916pads(Center Core)
Bottom
Side
Electrode Electroless Ni/Au
Bump Size Φ20µm
Bump Pitch ① 40µm (Center Core)
② 300µm (Peripheral)
③ 550µm (Outer Pad)
Number of Bump ① 120 pads (Center Core)
② 714 pads (Peripheral)
③ 40 pads (Outer Pad)
Number of Chip 89 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
WALTS-TEG WM40-0102JY
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WALTS-TEG WM40-0102JY

TEG_CC80TSV
Specification WM40-0102JY
Wafer Size 8inch
Wafer Thickness 725±25µm
Chip Size 10 mm x 8 mm
Function Daisy Chain
Electrode Cu Pillar
 Bump Size Φ20µm
Bump Height (Cu15µm + SnAg8µm)
Bump Pitch ① 40µm ②300µm
Number of Bump ①1200 bumps ② 714 bumps
Number of Chip 312 chips/wafer
Evaluation KIT WALTS-KIT CC80MarkII-0201JY
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WALTS-TEG CC80MarkIV-0101JY

TEG_CC80TSV
Specification CC80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25µm
 Chip Chip A Chip B
Chip Size 6.0 mm x 10.0 mm 4.0 mm x 10.0 mm
 Pad Pitch
① 40µm [10Row] x50µm [192Row] (Peripheral)
② 80µm staggered [3Row] (Center core)
③ 150µm Min. Lattice
Function Daisy Chain
Electrode Cu Pillar
Bump Size Φ25µm
Number of Bump/Pad ①1920bumps/1920pads
② 687 bumps/ 687 pads
③1743bumps/1743pads
①1920bumps/1920pads
② 531 bumps/ 531 pads
③ 978 bumps/ 978 pads
Number of Chip Chip A: 228chips/wafer Chip B: 228chips/wafer
Evaluation KIT WALTS-TEG IP80MarkIV-0101JY (Sillicon Interposer)
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WALTS-TEG IP80MarkIV-0101JY

TEG_CC80TSV
Specification IP80MarkIV-0101JY
Wafer Size 8inch
Wafer Thickness 725±25µm
Chip Size 15.0 mm x 15.0 mm
 Pad Pitch
① 40µm [10Row] x50µm [192Row] x2 (Peripheral)
② 80µm staggered [3Row] (Center core)
③ 150µm Min. Lattice
④ 300µm (Staggered)
Function Daisy Chain
Electrode Electroless Ni/Au plating
Bump Size ①27µm ②27µm ③27µm ④141µm■
Number of Bump/Pad ①3840bumps/3840pads
②1172bumps/1172pads
③2721bumps/2721pads
④328bumps/328pads
Number of Chip 97 chips/wafer
Evaluation KIT ---
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WALTS-TEG FC150LC-0101JY

TEG_FC150LCJY_Si
Specification FC150LC-0101JY
Wafer Size Φ 12 inch
Wafer Thickness 775±25µm
Chip Size 25.0mm■
Pad Pitch 150 µm (Area)
Function Daisy Chian
Bump Size Φ75µm
Bump Height Cu pillar (Cu30µm+SnAg15µm)
Number of Pad 25921 pads/chip (161x161)
Number of Chip 89 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT FC150LC-0302JY
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WALTS-TEG FC150JY [Si-Type]

TEG_FC150JY_Si
Specification Type-A Type-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150 µm (Area) 150 µm (Area)
Function Daisy Chian Daisy Chian
Bump Size Φ85µm Φ75µm
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 3721 pads/chip (61x61) 3721 pads/chip (61x61)
Number of Chip 208 chips/wafer 208 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY 2x2
WALTS-KIT FC150-0104JY 2x2
WALTS-KIT FC150R-0102JY 2x2
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WALTS-TEG FC150JY [Glass-Type]

TEG_FC150JY_Glass
Specification Type-A Type-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 700±70µm 700±70µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 150 µm (Area) 150 µm (Area)
Function - -
Bump Size Φ85µm Φ75µm
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 3721 pads/chip (61x61) 3721 pads/chip (61x61)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option) 208 chips/wafer 208 chips/wafer
Evaluation KIT WALTS-KIT 01A150P-10-2
WALTS-KIT FC150-0103JY 2x2
WALTS-KIT FC150-0104JY 2x2
WALTS-KIT FC150R-0102JY 2x2
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WALTS-TEG FC150SCJY

TEG_FC150SCJY
Specification Type-A Type-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 150 µm (Area) 150 µm (Area)
Function Daisy Chian Daisy Chian
Bump Size Φ85µm Φ75µm
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 784 pads/chip (28x28) 784 pads/chip (28x28)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option)
Evaluation KIT ---
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WALTS-TEG FC200JY [Si-Type]

TEG_FC200JY_Si
Specification Type-A Type-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200µm (Area) 200µm (Area)
Function Daisy Chian Daisy Chian
Bump Size Φ100µm Φ90µm
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 2116 pads/chip (46x46) 2116 pads/chip (46x46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY 2x2
WALTS-KIT FC200-0102JY 2x2
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WALTS-TEG FC200JY [Glass-Type]

TEG_FC200JY_Glass
Specification Type-A Type-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 700±70µm 700±70µm
Chip Size 10.0mm■ 10.0mm■
Pad Pitch 200µm (Area) 200µm (Area)
Function - -
Bump Size Φ100µm Φ90µm
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 2116 pads/chip (46x46) 2116 pads/chip (46x46)
Number of Chip 228 chips/wafer 228 chips/wafer
Polyimide (Option)  
Evaluation KIT WALTS-KIT 01A200P-10
WALTS-KIT 01A200P-10_C400
WALTS-KIT FC200-0101JY 2x2
WALTS-KIT FC200-0102JY 2x2
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WALTS-TEG FC200SCJY

TEG_FC200SCJY
Specification Type-A Type-B
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm
Chip Size 5.02mm■ 5.02mm■
Pad Pitch 200µm (Area) 200µm (Area)
Function Daisy Chian Daisy Chian
Bump Size Φ100µm Φ90µm
Bump Height Ball Mounted Solder Bump (80µm) Cu Pillar (Cu30µm+SnAg15µm)
Number of Pad 484 pads/chip (22x22) 484 pads/chip (22x22)
Number of Chip 832 chips/wafer 832 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT FC200SC-0202JY 2x3
WALTS-KIT FC200SC-0202JY 3x3
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WALTS-TEG FC500G-0101JY [Glass-Type]

TEG_FC500G
Specification WALTS-TEG FC500G-0101JY [Glass Type]
Wafer Size Φ 8 inch
Wafer Thickness 700±70µm
Chip Size 10.1mm■
Pad Pitch 500 µm
Function -
Bump Size Φ100µm
Bump Height (Cu30µm+SnAg15µm)
Number of Pad 40 pads/chip
Number of Chip 240 chips/wafer
Evaluation KIT ---
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WALTS-TEG FBW200-0001JY

WALTS-TEG FBW150-0001JY

WALTS-TEG FBW130-0001JY

WALTS-TEG FBW100-0001JY

WALTS-TEG FBW80-0001JY

TEG_FBW200
Specification FBW200 FBW150 FBW130 FBW100 FBW80
Wafer Size Φ 8 inch Φ 8 inch Φ 8 inch Φ 8 inch Φ 8 inch
Wafer Thickness 725±25µm 725±25µm 725±25µm 725±25µm 725±25µm
Bump Pitch 200µm 150µm 130µm 100µm 80µm
Electrode Cu Pillar Cu Pillar Cu Pillar Cu Pillar Cu Pillar
Bump Size Φ90µm Φ75µm Φ65µm Φ50µm Φ40µm
 Bump Height (Max.60µm) (Max.60µm) (Max.60µm) (Max.60µm) (Max.50µm)
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WLP TEG (0.4mm pitch & 0.3mm pitch)

WLP_0.3mm
Specification 0.4mm pitch BGA 0.3mm pitch BGA
Wafer Size Φ 8 inch Φ 8 inch
Wafer Thickness 400±20µm 400±20µm
Chip Size 6.0mm■ 6.0mm■
BGA Pitch 400µm 300µm
Function Daisy Chain Daisy Chain
Electrode Ball Mounted Solder Bump Ball Mounted Solder Bump
Pad Size (Φ227µm) (Φ177µm)
Number of Pad 144 pins/chip 264 pins/chip
Number of Chip 712 chips/wafer 712 chips/wafer
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WLP TEG (Free Size Cut TEG: TEG0306,TEG0408,TEG0510)

WLP_TEG0306
Specification TEG0306 TEG0408 TEG0510
Wafer Size Φ 8 inch Φ 8 inch Φ 8 inch
Wafer Thickness 400µm 400µm 400µm
Cut Size (Min.) 600µm■ 800µm■ 1000µm■
Pad Pitch 300µm 400µm 500µm
Function Daisy Chain Daisy Chain Daisy Chain
Electrode  Ball Mounted Solder Bump  Ball Mounted Solder Bump Ball Mounted Solder Bump 
Post Size 175µm 200µm 250µm
Number of Chip 79257 chips/wafer 44161 chips/wafer 28212 chips/wafer
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WALTS-TEG MC03-0101JY

TEG_MC03_3chipMix
Specification WALTS-TEG MC03-0101JY
Wafer Size Φ 8 inch
Wafer Thickness 725µm±25µm
Chip Size 0.3mm■ 0.4mm■ 0.5mm■
Pad Pitch 120µm 220µm 320µm
 Function Daisy Chain  Daisy Chain  Daisy Chain
Pad Metal Size X: 65µm
Y: 170µm
X: 65µm
Y: 270µm
X: 65µm
Y: 370µm
Bump Size 40µm
Bump Height Au(10µm)
Number of Chip 149,216
chips/wafer
80,816
chips/wafer
26,604
chips/wafer
 Evaluation KIT ---
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WALTS-TEG ME0102JY

[for Migration Test]

TEG_ME0102
Specification WALTS-TEG ME0102JY
Wafer Size Φ 12 inch
Chip Size 20mmx25mm
Chip Name Chip_10_15 Chip_20_25 Chip_30_35
Metal Height 5.5µm
Facing Legth 3mm
Line/Space 15µm/10µm 15µm/15µm 15µm/20µm 15µm/25µm 15µm/30µm 15µm/35µm
Pitch 25µm 30µm 35µm 40µm 45µm 50µm
Number of Chip 34 chips/wafer 40 chips/wafer 34 chips/wafer
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WALTS-TEG STAC-0101JY

[for Stress & Thermal Resistance Analysis]

TEG_STAC-0101JY
Specification STAC-0101JY
Wafer Size Φ 6 inch(Orientation Flat)
Wafer Thickness 550±25µm
Chip Size 3.0mm■
Pad Pitch 300µm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 1596 chips/wafer
Polyimide (Option)
<Option> Back Side Metallization
Evaluation KIT WALTS-KIT STAC-0201JY
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WALTS-TEG STACTEG-150FA-0101JY

WALTS-TEG STACTEG-300FA-0101JY

TEG_FC200SCJY
Specification STACTEG-150FA
STACTEG-300FA
*Base Wafer: WALTS-TEG STAC-0101JY
Wafer Size Φ 6 inch (Orientation Flat) Φ 6 inch (Orientation Flat)
Wafer Thickness 550±25µm 550±25µm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150µm 300µm
Function Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Stress Analysis by Piezoresistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size Φ110µm Φ110µm
Bump Height (Ni5µm+SnAg75µm) (Cu50µm+SnAg10µm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps 32 bumps + 64 Dummy bumps
Number of Chip 1596 chips/wafer 1596 chips/wafer
Polyimide (Option)
<Option> Back Side Metallization Back Side Metallization
Evaluation KIT WALTS-KIT STAC-0201JY
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WALTS-TEG HPW-0101JY

[for Thermal Resistance Analysis at High Power]

TEG_HPW-0101JY
Specification HPW-0101JY
Wafer Size Φ 8 inch(Notch)
Wafer Thickness 725±25µm
Chip Size 3.0mm■
Pad Pitch 300µm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Electrode (Al Pad, Cu Pillar Bump, Solder Bump, Au Bump)
Number of Pad 32 pads/chip
Number of Chip 2964 chips/wafer
Polyimide (Option)
 ï¼œMaximum Output> Max. 14.5W/Chip
<Option> Back Side Metallization
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WALTS-TEG HPWTEG-150FA-0101JY

WALTS-TEG HPWTEG-300FA-0101JY

TEG_FC200SCJY
Specification HPWTEG-150FA
HPWTEG-300FA
*Base Wafer: WALTS-TEG HPW-0101JY
Wafer Size Φ 8 inch(Notch) Φ 8 inch(Notch)
Wafer Thickness 725±25µm 725±25µm
Chip Size 3.0mm■ 3.0mm■
Pad Pitch 150µm 300µm
Function Thermal Analysis by Diode
Heat Generarion by Resistance
Thermal Analysis by Diode
Heat Generarion by Resistance
Bump Size Φ110µm Φ110µm
Bump Height (Ni5µm+SnAg75µm) (Cu50µm+SnAg10µm)
Number of Pad 32 pads/chip 32 pads/chip
Number of Bump 32 bumps + 253 Dummy bumps
32 bumps + 64 Dummy bumps
Number of Chip 2964 chips/wafer 2964 chips/wafer
<Option> Back Side Metallization Back Side Metallization
Evaluation KIT ---
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WALTS-TEG HPW TSV-0101JY

TEG_CC80TSV
Specification HPW TSV-0101JY
*Base Wafer: WALTS-TEG HPW-0101JY(SiN)
Wafer Size Φ 8 inch(Notch)
Wafer Thickness 100µm
Chip Size 3.0mm■
Top
Side
Electrode Cu Pillar
Bump Pitch 300µm
Bump Size Φ100µm
Bump Height (Cu50µm+SnAg10µm)
Number of Bump 32 bumps + 64 Dummy bumps
TSV Via Size Φ90µm
Bottom
Side 
Electrode Electroless Ni/Au Plating
Bump Pitch 300µm
Bump Size Φ100µm
Bump Height (8µm)
Number of Bump 32 bumps
Number of Chip 2964 chips/wafer
Evaluation KIT ---
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WALTS-TEG Thermal Chip

TEG_Thermal_A
Specification Type-A Type-B Type-C
Wafer Size Φ 5 inch Φ 5 inch Φ 5 inch
Wafer Thickness 625µm 625µm 625µm
Chip Size 3.2mm■ 1.6mm■ 0.8mm■
Pad Pitch any any any
Function Fever resistance Fever resistance Fever resistance
Bump Size - - -
Bump Height - - -
Number of Pad 20 pads/chip 12 pads/chip 8 pads/chip
Number of Chip 655 chips/wafer 974 chips/wafer 1272 chips/wafer
Polyimide (Option)
 Evaluation KIT ---
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WALTS-TEG LKWB120 (Low-k TEG)

TEG_LKWB120
Specification LKWB120
Wafer Size Φ 12 inch
Wafer Thickness 775±25µm
Chip Size 10.0 mm■
Pad Pitch 120 µm Staggered
Function Daisy Chian,Comb tooth Capacitor,Serpentine Resistor,Interlayer Capacitor,Via Chain
Bump Size -
Bump Height -
Number of Pad 616 pads/chip
Number of Chip 636 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT LKWB120
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WALTS-TEG LCD30-0101JY

TEG_LCD30-0101JY
Specification LCD30-0101JY
Wafer Size Φ 6 inch
Wafer Thickness 550±25µm
Chip Size 15.1 mm x 1.6 mm
Pad Pitch 30µm
Function Daisy Chian
Bump Size 20µmx100µm
Bump Height any
Number of Pad 726 pads/chip
Number of Chip 530 chips/wafer
Polyimide (Option)
Evaluation KIT WALTS-KIT LCD30_ITO
WALTS-KIT COF30
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WALTS-TEG PWB0101JY

TEG_PWB-0101JY
Specification PWB0101JY
Wafer Size Φ 6 inch
Wafer Thickness 625±25µm
Chip Size 6.0mm■
Pad Pitch -
Function Bondability Check
Bump Size -
Bump Height -
Number of Pad -
Number of Chip -
Polyimide (Option) ---
Evaluation KIT ---
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