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TEG FC120JY




Practical Components -TEG FC120JY

 

Chip Structure

 

  • Base Layer : P-TEOS
  • Metal layer : TiN / Al-0.5%Cu
  • Passivation Layer : HDP / P-SiN

(option) Polyimide

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

 

Specifications
TYPE B
Wafer Thickness 725±25μm
Wafer Size 8 inch
Chip Size 10.0mm
Bump Pitch 120μm
Function Daisy Chain
Pad Config Area
Electrode Cu Pillar
Pad Size 80μm
Passivation Opening φ20μm
Polyimide Opening φ40μm
UBM Size φ65μm
Bump Size φ60μm
Scribe Width 100μm
Number of Pad 5776pads/chip(76x76)
Number of Chip 208 chips/wafer





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