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Practical Components Test Wafer MB130-STG0101JY




Chip Structure

  • MB130
    • Base Layer : P-TEOS*
    • Metal Layer : TiW/ AI-1.0%Si-0.5%Cu
    • Passivation Layer : P-TEOS* / P-SiN (option) Polyimide
  • MB130A
    • Base Layer : P-TEOS*
    • Metal Layer : Ti / TiN / AI-1.0%Si-0.5%Cu
    • Passivation Layer : P-TEOS* / P-SiN (option) Polyimide

*TEOS : Tetraethoxysilane

 

 

Specifications MB130 (Type-A) MB130 (TYPE-B) MB130A
Wafer Size 6 inch 6 inch 8 inch
Wafer Thickness 550±25μm 550±25μm 725±25μm
Chip Size 2.13mm ♦ 2.13mm ♦ 2.13mm ♦
Pad pitch 130μm 130μm 130μm
Metal Thickness 0.8μm 0.8μm 1μm or 2μm or 3μm
Function Daisy Chain Daisy Chain Daisy Chain
Pad config Peripheral Peripheral Peripheral
Electrode Wire Bonding
Au Stud Bump
Cu Pillar Bump Wire Bonding
Au Stud Bump
Pad Size 100μm ♦ 100μm ♦ 100μm ♦
Passivation opening 80μm ♦ 80μm ♦ 80μm ♦
Polyimide opening 80μm ♦ 80μm ♦ 90μm ♦
Bump Size - 70μm ♦ -
Scribe width 50μm 50μm 60μm
Number of Pad 108 pads/chip
15pads×4 (Outer line)
12pads×4 (Inner line)
108 pads/chip
15pads×4 (Outer line)
12pads×4 (Inner line)
108 pads/chip
15pads×4 (Outer line)
12pads×4 (Inner line)
Number of Chip 3300 chips/wafer 3300 chips/wafer 6060 chips/wafer
      ♦ Bottom Side