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IP40-0101JY & IP40A-0101JY




Chip Structure

  • IP40
    • Base Layer : P-TEOS*
    • Metal Layer : TIN / AI-0.5%Cu
    • Passivation Layer : HDP* / P-SiN
  • IP40A
    • Base Layer : P-TEOS*
    • Metal Layer : TIN / AI-0.5%Cu
    • Passivation Layer : P-SiO / P-SiN

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

 

 

Specifications IP40(Model I) IP40A(Model I) IP40(Model II)
Wafer Size 8 inch 12 inch 8 inch
Wafer Thickness 725±25um 775±25um 725±25um
Chip Size 10.0mm 10.0mm 10.0mm
Pad Pitch 40μm pitch Full Area + Staggered
250μm pitch Peripheral
40μm pitch Staggered
250μm pitch Peripheral
Function Daisy Chain / Bump Short Check / Vernier
Breakdown Voltage Check between the Bumps
Pad Config Full Area Peripheral
Pad Size 32 μm ♦ 110 μm ♦
Passivation Opening 20 μm • 100 μm ♦
Scribe Width 100μm
Number of Pad 29576 pads 124 pads 1352 pads 124 pads
Number of Chip 228 chips/wafer 616 chips/wafer 228 chips/wafer
Surface Spec of Round Electroless Ni/Au plating
      • Top Side ♦ Bottom Side





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