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HPWTSV-0101JY




 

Specifications
Base Wafer HPW-0101JY (SiN)
Wafer Thickness 100μm
Top Side Electrode Cu Pillar Bump
Number of Bump 32 bumps + 64 Dummy bumps
Bump Size φ100μm
Bump Pitch 300μm
Bump Height Cu50μm+SnAg10μm
Top Coat Layer Passivation (P-SiN)
TSV Via Size φ90μm
BottomSide Electrode Electroless Ni/Au plating
Number of Bump 32 bumps
Bump Size φ100μm
Bump Pitch 300μm
Bump Height 8μm
Top Coat Layer P-TEOS





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