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FC200JY




Chip Structure

  • Base Layer : P-TEOS*
  • Metal Layer : TiN / AI-0.5%Cu
  • Passivation Layer : HDP* / P-SiN (option) NSG* / Polyimide

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma
*NSG : Non-doped Silicate Glass

 

 

Specifications                          Si    Glass
TYPE A B B**
Wafer Size 8 inch 8 inch 8 inch
Wafer Thickness 725±25μm 725±25μm 700±70μm
Chip Size 10.0mm ♦ 10.0mm ♦ 10.0mm ♦
Bump pitch 200μm 200μm 200μm
Function Daisy Chain Daisy Chain x
Pad config Area Area Area
Electrode Ball Mounted Solder Bump Cu Pillar Cu Pillar
Pad Size 100μm ♦ 100μm ♦ x
Passivation opening φ60μm • φ60μm • x
Polyimide opening φ80μm • φ80μm • x
UBM Size φ100μm • φ90μm • φ90μm •
Bump Size φ100μm • φ90μm • φ90μm •
Scribe width 100μm 100μm x
Number of Pad 2116 pads/chip (46×46) 2116 pads/chip (46×46) x
Number of Chip 228 chips/wafer 228 chips/wafer 228 chips/wafer
      • Top Side ♦ Bottom Side

 

**Glass die do not have daisy-chain function and no alignment marks or patterns on die






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