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CC80-0101JY




Chip Structure

  • Base Layer : P-TEOS*
  • Metal Layer : TiN / AI-0.5%Cu
  • Passivation Layer : HDP* / P-SiN (option) Polymide

*TEOS : Tetraethoxysilane
*HDP : High Density Plasma

 

 

Specifications  
Wafer Size 8 inch
Wafer Thickness 725±25μm
Chip Size 7.3mm ♦
Pad pitch 80μm staggered (Peripheral)
300μm Full area (Center core)
Function Daisy Chain
Pad config Peripheral
Electrode Au-stud Bump
Wire Bonding
Au Plating
Cu pillar
Pad Size 58μm ♦
Passivation opening 48μm ♦
Scribe width 120μm
Number of Chip 478 chips/wafer
  ♦ Bottom Side

 

 

Model Bump Size Number of Bumps
Model I ο 38μmor Φ42μm 1048 *Peripheral (648) / Full Area (400)
Model II ο 38μm 904 *Peripheral (648) / Full Area (256)
Model III ο 38μm 728 *Peripheral (648) / Full Area (80)
Model IV ο 38μm 648 *Peripheral (648) / Full Area (0)
*Model IV Compatible to WALTS-TEG MB80-STG0101JY





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